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1 article(s) from Kaßner, Lysann

Low temperature atomic layer deposition of cobalt using dicobalt hexacarbonyl-1-heptyne as precursor

Mathias Franz,
Mahnaz Safian Jouzdani,
Lysann Kaßner,
Marcus Daniel,
Frank Stahr and
Stefan E. Schulz

Beilstein J. Nanotechnol. 2023, 14, 951–963, doi:10.3762/bjnano.14.78

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Figure 1: Schematic sketch of the scia Atol 200 processing tool.

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Figure 2: Schematic sketch of the structure of the precursor [Co₂(CO)₆HC≡CC₅H₁₁].

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Figure 3: Influence of deposition temperature on film growth rate of continuous CVD depositions. The film gro...

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Figure 4: Temperature dependence of inhibition time (red dots) and CVD growth rate (blue diamonds) extracted ...

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Figure 5: XPS measurements of the CVD film deposited at 150 °C.

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Figure 6: Growth per cycle of ALD processes with [Co₂(CO)₆HC≡CC₅H₁₁] precursor at various temperatures.

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Figure 7: Film thickness evolution measured by in line spectroscopic ellipsometry for a deposition process at...

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Figure 8: Influence of precursor pulse time on growth rate for depositions at 85 and 90 °C including a satura...

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Figure 9: Influence of purging time after the precursor pulse (purging time 1) and after the H₂ plasma pulse ...

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Figure 10: Influence of the H₂ plasma pulse length on film thickness with the corresponding thickness distribu...

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Figure 11: Thickness distribution of cobalt film on a 200 mm wafer after 1500 cycles at 85 °C with 2 s H₂ plas...

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Figure 12: Thickness distribution of cobalt film on a 200 mm wafer after 1500 cycles at 85 °C with 4 s H₂ plas...

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Figure 13: XPS results of a cobalt film deposited at 35 °C by ALD with [Co₂(CO)₆HC≡CC₅H₁₁] precursor.

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Figure 14: XPS measurements of a cobalt film deposited at 85 °C by ALD with [Co₂(CO)₆HC≡CC₅H₁₁] precursor.

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Published 15 Sep 2023

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